收藏本站
New Product
Si1046X
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.420 at V GS = 4.5 V
0.501 at V GS = 2.5 V
0.660 at V GS = 1.8 V
I D (A) a
0.606
0.505
0.15
Q g (Typ.)
0.92
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET: 1.8 V Rated
? ESD Protected: 2000 V
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
? Battery Operated Systems
? Power Supply Converter Circuits
? Load/Power Switching Cell Phones, Pagers
SC89-3L
G
1
Marking Code
3
XX
3
D
Lot Tracea b ility
and Date Code
S
2
Part # Code
Top V ie w
Orderin g Information: Si1046X-T1-E3 (Lead (P b )-free)
Si1046X-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwis e noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
20
±8
Unit
V
0.606
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
b, c
0.485 b, c
2.5
0.21 b, c
0.25 b, c
0.16 b, c
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
t ≤ 5s
Steady State
R thJA
440
540
530
650
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 74594
S09-1225-Rev. C, 29-Jun-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI1050X-T1-GE3 MOSFET N-CH D-S 8V SC-89-6
SI1051X-T1-E3 MOSFET P-CH 8V 1.2A SC89-6
SI1056X-T1-GE3 MOSFET N-CH D-S 20V SC-89-6
SI1058X-T1-GE3 MOSFET N-CH 20V SC89
SI1065X-T1-GE3 MOSFET P-CH 12V 1.18A SC89-6
SI1067X-T1-GE3 MOSFET P-CH 20V 1.06A SC89-6
SI1070X-T1-GE3 MOSFET N-CH 30V 1.2A SOT563F
SI1071X-T1-GE3 MOSFET P-CH 30V 960MA SC89-6
相关代理商/技术参数
SI104-820 制造商:未知厂家 制造商全称:未知厂家 功能描述:SMT Power Inductor
SI104-820K 制造商:DELTA 制造商全称:Delta Electronics, Inc. 功能描述:SMT Power Inductor
SI1050X 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 8-V (D-S) MOSFET
SI1050X_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 8-V (D-S) MOSFET
SI1050X_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 8 V (D-S) MOSFET
SI1050X-T1-E3 功能描述:MOSFET 8.0V 1.34A 236mW 86mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1050X-T1-GE3 功能描述:MOSFET 8.0V 1.34A 0.236W 86mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1051X 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 8-V (D-S) MOSFET